What are the advantageous products of Jiangsu Changjing Technology?

As a leading enterprise in the field of semiconductor power devices in China, Jiangsu Changjing Technology's advantageous product system covers core areas such as consumer electronics, industrial control, automotive electronics, and communication equipment, forming a differentiated competitive advantage of "technology driven, scenario oriented, and quality assurance". The following analysis is conducted from three dimensions: product line layout, technical features, and application scenarios:
1、 Product line layout: Full chain coverage, focusing on high growth tracks
Power semiconductor device
MOSFET series: covering voltage levels of 30V-1500V, including Trench/SGT/SJ and other process platforms, featuring low on resistance (Rds (on) as low as 0.8m Ω) and high switching frequency (above 1MHz).
IGBT series: developed for industrial frequency conversion and new energy vehicles, using Field Stop technology to reduce switch losses by 30% and withstand temperatures up to 175 ℃.
Diode/rectifier bridge: The ultrafast recovery diode (FRD) has a reverse recovery time (Trr) as short as 15ns, making it suitable for high-frequency rectification scenarios.
Simulation and Logic Chips
LDO (Low Dropout Linear Regulator): Output current coverage of 100mA-3A, static current as low as 6 μ A, suitable for wearable devices.
ESD protection device: TVS array products have a capacitance as low as 0.2pF and support high-speed interface protection such as USB 3.1 and HDMI 2.1.
Third generation semiconductor devices
SiC MOSFET: 650V/1200V series, with a conduction resistance reduced by 80% compared to silicon-based devices, suitable for photovoltaic inverters and charging stations.
GaN HEMT: 650V enhanced device with a switching frequency of MHz, promoting the evolution of fast charging power supplies towards miniaturization.
2、 Technical features: Innovation driven, breaking through performance boundaries
Process platform optimization
SGT (Shielded Gate Trench) process: By using a shielded gate structure to reduce gate drain capacitance (Cgd), MOSFET switching losses are reduced by 40%.
Field Stop IGBT technology: using thin film process and electron injection layer, balancing conduction voltage drop and switching speed, reducing losses by 30% compared to traditional IGBT.
Innovation in Packaging Technology
DFN/QFN packaging: Achieving ultra miniaturization of 0.8 × 0.6mm, suitable for space limited scenarios such as mobile phones and TWS earphones.
TO-247 Plus package: enhances heat dissipation performance and supports new energy vehicle motor controllers with current requirements of over 300A.
Vehicle grade reliability
AEC-Q101 certification: The automotive grade MOSFET has passed the dual 85 ℃ (85 ℃/85% RH) 1000 hour test with a failure rate of<10ppm.
Functional Safety Development: Compliant with ISO 26262 standard, providing ASIL-B/D level devices to ensure the safety of automotive electronic systems.
3、 Application scenario: Deep binding to high prosperity tracks
Consumer Electronics
Fast charging power supply: The 65W GaN fast charging solution adopts Changjing Technology GaN HEMT, with a power density of 1.3W/cm ³ and an efficiency of>95%.
TWS earphones: Ultra small LDO (SOT23-5 package) powered by Bluetooth chip, with a static current of only 6 μ A, extending battery life.
Industrial control
Inverter: IGBT module (1200V/300A) paired with driver chip to achieve efficient motor speed regulation with harmonic distortion rate<3%.
Photovoltaic inverter: SiC MOSFET is applied to 1500V string inverters, with a conversion efficiency of 99% and a system cost reduction of 20%.
Automotive Electronics
OBC (Car Charger): Vehicle grade MOSFET (80V/150A) supports bidirectional charging and discharging, with an efficiency of>98%, meeting the requirements of 800V high voltage platform.
BMS (Battery Management System): High precision analog front-end chip (AFE) achieves ± 0.5% voltage sampling accuracy to ensure battery safety.
communication devices
5G base station: High frequency MOSFET (60V/100A) is used for the power module, with a switching frequency of up to 500kHz and a ripple suppression ratio>60dB.
Optical module: ESD protection device (SOD-323 package) supports 25Gbps signal transmission, with capacitance<0.5pF, ensuring data integrity.
4、 Market Competitiveness: Localization Advantage and Ecological Synergy
Localization response speed
Quick customization capability: Provide MOSFET packaging customization solutions within 72 hours and deliver samples within 4 weeks, reducing the lead time by 50% compared to international manufacturers.
Technical support system: FAE teams have been established in Shenzhen, Shanghai, and Nanjing to provide full process support from selection to failure analysis.
Ecological Chain Collaboration
Deep cooperation with wafer fabs: co building power device production lines with companies such as Huahong Hongli and SMIC Shaoxing to ensure production capacity supply.
Modular solution output: Provides an integrated solution of "device+driver+protection" to reduce customer design complexity.
summarize
Jiangsu Changjing Technology has built a multi-level product system covering consumer electronics, industry, automotive, and communication through full voltage level power device layout, process and packaging technology innovation, and vehicle grade reliability assurance. Its advantages are not only reflected in its leading technical parameters, but also in its ability to quickly respond to local market demands and ecological synergy. With the continuous explosion of markets such as new energy vehicles, 5G communication, and photovoltaic energy storage, Changjing Technology is expected to further consolidate its leading position in the domestic semiconductor power device field with the dual wheel drive of "technology+scenario".